PART |
Description |
Maker |
TGF2021-12 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
TGF2021-08 |
DC - 12 GHz Discrete power pHEMT 直流- 12吉赫的分立功率pHEMT
|
Xiamen Hongfa Electroacoustic Co., Ltd.
|
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
|
TGF4230-SCC |
DC - 12 GHz Discrete HFET
|
TriQuint Semiconductor,Inc.
|
TGF4230-SCC |
DC - 12 GHz Discrete HFET
|
TriQuint Semiconductor, Inc. TRIQUINT[TriQuint Semiconductor]
|
MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN Complementary Silicon Power Transistors Power 10A 250V Discrete PNP
|
ON Semiconductor
|
UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65,一百二十九分之一百二十八 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp. NEC Corp.
|
VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻,高功率-卓越的长期稳 Resistors, fixed discrete
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z) NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes List of Unclassifed Manufacturers
|
2SJ602 2SJ602-S 2SJ602-ZJ 2SJ602-Z |
MOS FIELD EFFECT TRANSISTOR Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0632-3 00; No. of Positions: 30; Connector Type Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263
|
NEC Corp.
|
2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE P-channel enhancement type
|
NEC Corp. NEC[NEC]
|
PE9304_06 9304-00 9304-01 9304-11 PE9304 PE930406 |
1- 7 GHz Low Power CMOS Divide-by-2 Prescaler 1 GHz - 7 GHz Low Power UltraCMOS Divide-by-2 Prescaler Rad-hard for Space Applications
|
Peregrine Semiconductor Cor... PEREGRINE[Peregrine Semiconductor Corp.] Peregrine Semiconductor...
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